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| CMT4953G P-CHANNEL ENHANCEMENT MODE MOSFET GENERAL DESCRIPTION The CMT4953G provide the designer with the best combination of fast switching , ruggedized device design , low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM SO-8 Package Design APPLICATIONS Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION 8-PIN SOP (S08) SYMBOL Top View P-Channel MOSFET ORDERING INFORMATION Part Number CMT4953G Package SOP-8 *Note: G : Suffix for Pb Free Product 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 1 CMT4953G P-CHANNEL ENHANCEMENT MODE MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain- Source Voltage Gate- Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25 ID IDM TA=25 PD TJ TSTG Value -30 20 -4.5 -23 2 -55 to150 -55 to 150 0.02 Unit V V A A W /W /W Total Power Dissipation Operating Junction Temperature Range Storage Temperature Range Linear Derating Factor Thermal Resistance Junction-ambient (Max) 1 Rthj-amb 62.5 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 2 CMT4953G P-CHANNEL ENHANCEMENT MODE MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. (unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistancem Gate Threshold Voltage Forward Transconductance 2 2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-4.6A VGS=-4.5V, ID=-3.6A VDS=VGS, ID=-250uA VDS=-5V, ID=-4.6A VGS=20V ID=-4.6A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz Min. -30 -1 - Typ. 5 11.7 2.1 2.9 9 10 37 23 582 125 86 Max. Units 55 90 -2.5 -1 100 V m m V S uA nA nC nC nC ns ns ns ns pF pF pF Drain-Source Leakage Current (Tj=25 C) VDS=-24V, VGS=0V Gate-Source Leakage Current Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=-1.7A, VGS=0V Min. - Typ. -0.84 Max. Units -1.2 V Notes: 1.Surface mounted on FR4 Board , t2% 2.Pulse width 300us , duty cycle 2%. 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 3 CMT4953G P-CHANNEL ENHANCEMENT MODE MOSFET TYPICAL CHARACTERISTICS 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 4 CMT4953G P-CHANNEL ENHANCEMENT MODE MOSFET 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 5 CMT4953G P-CHANNEL ENHANCEMENT MODE MOSFET PACKAGE DIMENSION 8-PIN SOP (S08) PIN 1 ID 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 6 CMT4953G P-CHANNEL ENHANCEMENT MODE MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the HsinChu Headquarter 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2007/03/01 Rev1.0 Champion Microelectronic Corporation Page 7 |
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